Method of fabricating openings and contact holes

Details Method of fabricating openings and contact holes Method of fabricating openings and contact holes

2005-10-06

2010-11-02

Vinh, Lan (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S243000, C438S639000, C438S743000

Reexamination Certificate

active

07825034

ABSTRACT:
A substrate having an etch stop layer and at least a dielectric layer disposed from bottom to top is provided. The dielectric layer is then patterned to form a plurality of openings exposing the etch stop layer. A dielectric thin film is subsequently formed to cover the dielectric layer, the sidewalls of the openings, and the etch stop layer. The dielectric thin film disposed on the dielectric layer and the etch stop layer is then removed.

REFERENCES:
patent: 6093641 (2000-07-01), Park
patent: 6432814 (2002-08-01), Steiner et al.
patent: 6492263 (2002-12-01), Peng et al.
patent: 6569760 (2003-05-01), Lin et al.
patent: 6713310 (2004-03-01), Song et al.
patent: 7112506 (2006-09-01), Kim et al.
patent: 2004/0018712 (2004-01-01), Plas et al.
patent: 2004/0169224 (2004-09-01), Ebihara
patent: 2005/0074965 (2005-04-01), Lee et al.
patent: 1337740 (2002-02-01), None
patent: 1519953 (2004-08-01), None

Affiliated with

Also associated with

Rating

Method of fabricating openings and contact holes does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating openings and contact holes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating openings and contact holes will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4239582