Method of fabricating ohmic contact on n-type gallium...

Details Method of fabricating ohmic contact on n-type gallium... Method of fabricating ohmic contact on n-type gallium...

2007-05-08

2007-05-08

Olsen, Allan (Department: 1763)

Etching a substrate: processes

Forming or treating electrical conductor article

C216S063000, C216S067000, C216S068000, C216S075000, C438S604000, C438S598000, C438S618000, C438S172000

Reexamination Certificate

active

10103523

ABSTRACT:
Forming low contract resistance metal contacts on GaN films by treating a GaN surface using a chlorine gas Inductively Coupled Plasma (ICP) etch process before the metal contacts are formed. Beneficially, the GaN is n-type and doped with Si, while the metal contacts include alternating layers of Ti and Al. Additionally, the GaN film is dipped in a solution of HCl:H2O prior to metal contact formation.

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