Method of fabricating of semiconductor device by forming two ele

Details Method of fabricating of semiconductor device by forming two ele Method of fabricating of semiconductor device by forming two ele

1993-04-28

1994-09-20

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 29, 437 40, 437 48, 437941, H01L 2170, H01L 2700

Patent

active

053489071

ABSTRACT:
A fabrication method of a semiconductor device in which the characteristic deterioration of the device due to electric charges generating in the fabrication process can be prevented. A first well of a first electroconductive type is formed on a semiconductor substrate of the first electroconductive type. The first well is surrounded by a semiconductor layer of a second electroconductive type opposite to the first electroconductive type. A second well of the first electroconductive type, which is insulated from the first well and connected to the substrate, is formed on the substrate. An electroconductive layer for connecting the first and second wells. The electroconductive layer is partially removed to insulate the first and second wells after finishing a process having a possibility for generating electric charges on the substrate.

REFERENCES:
patent: 4621412 (1986-11-01), Kobayashi et al.
patent: 5106769 (1992-04-01), Matsumi
patent: 5185294 (1993-02-01), Lam et al.

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