Method of fabricating nonvolatile semiconductor memory device

Details Method of fabricating nonvolatile semiconductor memory device Method of fabricating nonvolatile semiconductor memory device

1994-03-17

1995-08-29

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437233, H01L 218247, H01L 21205

Patent

active

054459826

ABSTRACT:
A method of fabricating a nonvolatile semiconductor memory device so as to improve interface properties between a tunneling oxide layer and a floating gate of the nonvolatile semiconductor memory device is disclosed, wherein the method comprises the steps of forming a tunneling oxide layer on a substrate, forming a floating gate consisting of a plurality of thin silicon layers which are formed through the repeated cyclical process under the low temperature of around 550 degrees C., forming an interposed insulating layer over a whole surface of the floating gate by a selective etching process of the silicon layers; and forming a control gate over a whole surface of the interposed insulating layer.

REFERENCES:
patent: 5147813 (1992-09-01), Woo
patent: 5350698 (1994-09-01), Huang et al.

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