Method of fabricating non-volatile sidewall memory cell

Details Method of fabricating non-volatile sidewall memory cell Method of fabricating non-volatile sidewall memory cell

1995-04-21

1996-10-08

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 49, 148DIG50, H01L 218247

Patent

active

055630839

ABSTRACT:
A non-volatile memory cell and array of such cells is provided. The memory cell includes a single transistor floating gate cell fabricated on a sidewall of a silicon pillar etched into a silicon substrate. The memory cells are arranged in an array of rows extending in a bit line direction and columns extending in a word line direction. A substantially smaller cell and array size is realized by limiting the dimension of the pillar and the bit line in the word line direction to be the minimum line width as limited by the lithography.

REFERENCES:
patent: 5071782 (1991-12-01), Mori
patent: 5087584 (1992-02-01), Wada et al.
patent: 5379255 (1995-01-01), Shah
patent: 5382540 (1995-01-01), Sharma

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