Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2005-06-28
2005-06-28
Zarabian, Amir (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S044000, C438S047000, C438S604000, C257S103000
Reexamination Certificate
active
06911351
ABSTRACT:
The method of fabricating a nitride semiconductor of this invention includes the steps of forming, on a substrate, a first nitride semiconductor layer of AluGavInwN, wherein 0≦u, v, w≦1 and u+v+w=1; forming, in an upper portion of the first nitride semiconductor layer, plural convexes extending at intervals along a substrate surface direction; forming a mask film for covering bottoms of recesses formed between the convexes adjacent to each other; and growing, on the first nitride semiconductor layer, a second nitride semiconductor layer of AlxGayInzN, wherein 0≦x, y, z≦1 and x+y+z=1, by using, as a seed crystal, C planes corresponding to top faces of the convexes exposed from the mask film.
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Ban Yuzaburo
Hasegawa Yoshiaki
Ishibashi Akihiko
Kidoguchi Isao
Kume Masahiro
Duong Khanh
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
Zarabian Amir
LandOfFree
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