Method of fabricating nitride semiconductor device

Details Method of fabricating nitride semiconductor device Method of fabricating nitride semiconductor device

2006-05-09

2006-05-09

Guerrero, Maria F. (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Substrate dicing

C438S042000, C438S046000, C438S460000

Reexamination Certificate

active

07041523

ABSTRACT:
In a wafer having an LD structure251formed on a GaN-based substrate250, cleavage guide grooves252are formed in its surface by scribing from above the LD structure251with a diamond needle. The cleavage guide grooves252are formed one along each of stripe-shaped waveguides253formed parallel to the <1-100> direction of the wafer, and are formed in the shape of broken lines in the <11-20> direction of the wafer.

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