Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Patent
1992-09-30
1994-07-19
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With a step of measuring, testing, or sensing
437 84, 117 87, 117105, 117921, 117938, C30B 2300
Patent
active
053306120
ABSTRACT:
A single-crystal substrate is prepared which has the (100) crystal plane with a step line formed therein by cleaving an MgO single crystal. By evaporating metal onto the cleavage plane, with a mask wire of platinum disposed at a distance from the cleavage plane and extended in a direction across the step line, a pair of metal thin film electrodes separated by a gap are epitaxially grown. By this, a step line corresponding to the cleavage-plane step line is formed in the surface of each of the metal thin film electrodes. Metal is further evaporated onto the metal thin film electrodes at a low rate, by which nano-size thin wires extending along the step lines are grown so that they approach each other and are finally connected to each other.
REFERENCES:
patent: 4983540 (1991-01-01), Yamaguchi et al.
patent: 5104824 (1992-04-01), Clausen et al.
patent: 5114877 (1992-05-01), Paoli et al.
patent: 5202290 (1993-04-01), Moskovits
patent: 5236547 (1993-08-01), Takahashi et al.
Advantest Corporation
Kunemund Robert
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