Method of fabricating n-type antimony-based strained layer super

Details Method of fabricating n-type antimony-based strained layer super Method of fabricating n-type antimony-based strained layer super

1994-04-14

1996-02-06

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437105, 437107, 437126, 148DIG160, H01L 2120

Patent

active

054895499

ABSTRACT:
High speed Group III-Sb materials are n-doped in a molecular beam epitaxy process by forming a superlattice with n-doped strained layers of a Group III-V compound upon Group III-Sb base layers. The base layers have lower conduction band energy levels than the strained layers, and allow doping electrons from the strained layers to flow into the base layers. The base layers preferably comprise Al.sub.x Ga.sub.1-x Sb, while the strained layers preferably comprise a binary or ternary compound such as Al.sub.y Ga.sub.1-y As having a single Group V component, where x and y are each from 0 to 1.0. The strained layers can be n-doped with silicon or tin, which would produce p-type doping if added directly to the base layers.

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Tuttle et al., "Effects of interface layer sequencing on the transport properties of InAs/AlSb: Evidence for antisite donors at the InAs/AlSb interface", Journal of Applied Physics, vol. 67, No. 6, Mar. 15, 1990, pp. 3032-3037.
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