Chemistry: molecular biology and microbiology – Process of mutation – cell fusion – or genetic modification – Introduction of a polynucleotide molecule into or...
Reexamination Certificate
2007-01-16
2007-01-16
Owens, Douglas W. (Department: 2818)
Chemistry: molecular biology and microbiology
Process of mutation, cell fusion, or genetic modification
Introduction of a polynucleotide molecule into or...
C438S458000, C438S459000, C438S508000
Reexamination Certificate
active
10719663
ABSTRACT:
A method for fabricating multi layer devices on a substrate with a buried oxide layer is disclosed. Multi layer microelectromechanical, microfluidic, and integrated circuit devices are fabricated on a substrate with layers of predetermined weak and strong bond regions with deconstructed layers of devices at or on the weak bond regions. The layers are then peeled and subsequently bonded to produce a multi layer microelectromechanical and microfluidic devices. An arbitrary number of layers can be bonded and stacked to create either microelectromechanical or microfluidic device or a hyrbid type of device.
REFERENCES:
patent: 4309225 (1982-01-01), Fan et al.
patent: 4370176 (1983-01-01), Bruel
patent: 4371421 (1983-02-01), Fan et al.
patent: 4471003 (1984-09-01), Cann
patent: 4479846 (1984-10-01), Smith et al.
patent: 4500563 (1985-02-01), Ellenberger et al.
patent: 4585945 (1986-04-01), Bruel et al.
patent: 4816420 (1989-03-01), Bozler et al.
patent: 4837182 (1989-06-01), Bozler et al.
patent: 4846931 (1989-07-01), Gmitter et al.
patent: 4883561 (1989-11-01), Gmitter et al.
patent: 5273616 (1993-12-01), Bozler et al.
patent: 5362682 (1994-11-01), Bozler et al.
patent: 5374564 (1994-12-01), Bruel
patent: 5453153 (1995-09-01), Fan et al.
patent: 5559043 (1996-09-01), Bruel
patent: 5588994 (1996-12-01), Bozler et al.
patent: 5676752 (1997-10-01), Bozler et al.
patent: 5710057 (1998-01-01), Kenney
patent: 5714395 (1998-02-01), Bruel
patent: 5793115 (1998-08-01), Zavracky et al.
patent: 5845123 (1998-12-01), Johnson et al.
patent: 5877070 (1999-03-01), Goesele et al.
patent: 5882987 (1999-03-01), Srikrishnan
patent: 5897939 (1999-04-01), Deleonibus
patent: 5909627 (1999-06-01), Egloff
patent: 5920764 (1999-07-01), Hanson et al.
patent: 5933750 (1999-08-01), Wilson et al.
patent: 5976953 (1999-11-01), Zavracky et al.
patent: 5985688 (1999-11-01), Bruel
patent: 5993677 (1999-11-01), Biasse et al.
patent: 5994207 (1999-11-01), Henley et al.
patent: 6020252 (2000-02-01), Aspar et al.
patent: 6027988 (2000-02-01), Cheung et al.
patent: 6033974 (2000-03-01), Henley et al.
patent: 6054363 (2000-04-01), Sakaguchi et al.
patent: 6054370 (2000-04-01), Doyle
patent: 6059877 (2000-05-01), Bruel
patent: 6071795 (2000-06-01), Cheung et al.
patent: 6103597 (2000-08-01), Aspar et al.
patent: 6137110 (2000-10-01), Pellin et al.
patent: 6146979 (2000-11-01), Henley et al.
patent: 6155909 (2000-12-01), Henley et al.
patent: 6159323 (2000-12-01), Joly et al.
patent: 6159824 (2000-12-01), Henley et al.
patent: 6159825 (2000-12-01), Henley et al.
patent: 6162705 (2000-12-01), Henley et al.
patent: 6184060 (2001-02-01), Siniaguine
patent: 6184111 (2001-02-01), Henley et al.
patent: 6187110 (2001-02-01), Henley et al.
patent: 6190937 (2001-02-01), Nakagawa et al.
patent: 6190998 (2001-02-01), Bruel et al.
patent: 6191007 (2001-02-01), Matsui et al.
patent: 6204151 (2001-03-01), Malik et al.
patent: 6214733 (2001-04-01), Sickmiller
patent: 6221738 (2001-04-01), Sakaguchi et al.
patent: 6221740 (2001-04-01), Bryan et al.
patent: 6221774 (2001-04-01), Malik
patent: 6225190 (2001-05-01), Bruel et al.
patent: 6225192 (2001-05-01), Aspar et al.
patent: 6232136 (2001-05-01), Zavracky et al.
patent: 6309945 (2001-10-01), Sato et al.
patent: 6387736 (2002-05-01), Cao et al.
patent: 6500731 (2002-12-01), Nakagawa et al.
patent: 6875671 (2005-04-01), Faris
patent: 03559131 (1990-02-01), None
patent: 0793263 (1997-09-01), None
patent: 0938129 (1999-08-01), None
patent: 01045448 (2000-10-01), None
patent: 2758907 (1998-07-01), None
patent: 2771852 (1999-06-01), None
patent: 63-155731 (1988-06-01), None
patent: WO 95/20824 (1995-08-01), None
patent: WO 98/20543 (1998-05-01), None
patent: WO 98/33209 (1998-07-01), None
patent: WO 99/05711 (1999-02-01), None
patent: WO 99/08316 (1999-02-01), None
patent: WO 99/35674 (1999-07-01), None
patent: WO 99/39377 (1999-08-01), None
patent: WO 99/66559 (1999-12-01), None
patent: WO 00/03429 (2000-01-01), None
patent: WO 00/24054 (2000-04-01), None
patent: WO 00/24059 (2000-04-01), None
patent: WO 00/46847 (2000-08-01), None
patent: WO 00/48238 (2000-08-01), None
patent: WO 00/75968 (2000-12-01), None
patent: WO 00/75995 (2000-12-01), None
patent: WO 01/03171 (2001-01-01), None
patent: WO 01/03172 (2001-01-01), None
Miller, D.L., et.al., “GasAs Peeled Film Solar Cells,” Rockwell International, pp. 1-45, Mar. 15, 1980-Dec. 31, 1981.
Fan, J.C.C., “Thin Films of III-V Compounds and Their Applications,” Journal de Physique, 43, pp. C1-327, (1982).
Konagai, Makoto, et al., “High Efficiency GaAs Thin Film Solar Cells by Peeled Film Technology”, Journal of Crystal Growth, vol. 45, pp. 277-280, 1978.
Bower, R.W., et al., “Aligned Wafer Bonding: A Key to Three Dimensional Microstructures,” Journal of electronic Materials, vol. 20, No. 5, pp. 383-387, 1991.
Lee, K.Y., et al., “Fabrication of Ultrasmall Devices on Thin Activ GaAs Membranes,” J. Vac. Sci. Technol.B5 (1), pp. 322-325, 1987.
Camperi-Ginestet, C., “Alignable Epitaxial Liftoff of GaAs Materials With Selective Deposition Using Polyimide Diaphragms,” IEEE Transactions Photonics Technology Letters, pp. 1123-1126, Dec. 12, 1991.
Hargis, M.C., et al., “Epitaxial Life-Off GaAS/A1GaAs Metal - Semiconductor-Metal Photodetectors with Back Passivation,” IEEE Photonics Technology Letters, vol. 5, No. 10, pp. 1210-1212, 1993.
Schnitzer, L., et al., “Ultra-High Efficiency Light-Emitting-Diode Arrays,” IEEE Transactions on Electron Devices, vol. 40, No. 11, pp. 2108-2109, Nov. 1993.
Zhang, L., et al., “Low-energy Separation By Implantation of Oxygen Structures Via Plasma Source Ion Implantation,” Applied Physics Lett. vol. 65, No. 8, pp. 962-964, Aug. 22, 1994.
Bengtsson, S., et al., “Silicon on Aluminum Nitride Structures Formed by Wafer Bonding,” Proceedings IEEE International SOI Conference, pp. 35-36, Oct. 1994.
Zahraman, K., et al., “Epitaxial Lift-Off in Photovoltaics: Ultra Thin A10.2Ga0.8AsCell in a Mechanically Stacked (AL, Ga)As/Si Tandem,” First WCPEC, pp. 1898-1901, Dec. 5-9 1994.
Young, Paul G., et al., “RF Control of Epitaxial Lift-Off PHEMT's Under Backside Illumination,” IEEE Journal of Quantum Electronics, vol. 30, No. 8, pp. 1782-1786, Aug. 1994.
Hageman, P.R., et al., “Re-use of GAAS Substrated for Epitaxial Life-Off III-V Solar Cells,” IEEE, pp. 1910-1913, 1994.
Wilkinson, Scott T., et al., “Integration of Thin Film Optoelectronic Devices onto Micromachined Movable Platforms,” IEEE Photonics Technology Letters, vol. 6, No. 9, 1115-1118, Sep. 1994.
Callahan, J., et al., “Alignable Lift-Off Transfer of Device Arrays Via A Single Polymeric Carrier Membrane,” IEEE, pp. 1274 - 1277, 1995.
Spiering, Vincent L., et al., “Sacrificial Wafer Bonding for Planarization After Very Deep Etching,” Journal of Microelectromechanical Systems, vol. 4, No. 3, pp. 151-157, Sep. 1995.
Bhattacharya, D., et al., “Optical Mixing in Epitaxial Lift-Off Pseudomorphic HEMT's ,” IEEE Photonics Technology Letters, vol. 7, No. 10, pp. 1171-1173, Oct. 1995.
Hohkawa, K., et al., “Fabricatoin of Surface Acoustic Wave Semiconductor Coupled Devices using Epitaxial Lift-off Technology,” IEEE Ultrasonics Symposium, pp. 401-404, 1995.
Fan, J.C., et al., “AIGAAs/GaAs Heterojunction Bipolar Transistors on Si Substrate Using Epitaxial Lift-Off,” IEEE Electron Device Letters, vol. 16, No. 9, pp. 393-395, Sep. 1995.
Shah, Divyang M., et al., “Epitaxial Lift-Off GaAs HEMT's,” IEEE Transactions on Electron Devices, vol. 42, No. 11, pp. 1877-1881, Nov. 1995.
Morf, T., et al., Integrating Optical Receiver Transplanted by Epitaxial Lift Off, IEEE, pp. 189-192, 1995.
Herrscher, M., “Epitaxial Liftoff In GaAs/InP MSM Photodetectors on Si,” Electronics Letters, vol. 31, No. 16, pp. 1383-1384, Aug. 3, 1995.
Omnes, et al., “Substrate Free GaAs Photovoltaic Cells on Pd-Coated Silicon wi
Nguyen Dao H.
Owens Douglas W.
Reveo Inc
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