Method of fabricating MNOS transistors having implanted channels

Details Method of fabricating MNOS transistors having implanted channels Method of fabricating MNOS transistors having implanted channels

1978-08-25

1980-04-08

Tupman, W. C.

Metal working

Method of mechanical manufacture

Assembling or joining

29579, B01j 1700

Patent

active

041965078

ABSTRACT:
The method of forming an MNOS transistor having a stepped channel oxide region utilizes intentional undercutting of the oxide in the channel region to provide a self-aligned mask for ion implanting a region of the same conductivity type, but more heavily doped which will be centrally located beneath the thin portion of the channel region in order to increase the threshold window of the device while saving a photomask operation.

REFERENCES:
patent: 3758943 (1973-09-01), Shibata
patent: 3898353 (1975-08-01), Napoli
patent: 4084987 (1978-04-01), Godber

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