Method of fabricating MMIC semiconductor integrated circuits usi

Details Method of fabricating MMIC semiconductor integrated circuits usi Method of fabricating MMIC semiconductor integrated circuits usi

1990-01-05

1991-09-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 7, 437 47, 437 60, 437 51, 437935, 364490, 364491, H01L 2166

Patent

active

050513737

ABSTRACT:
An active device such as an HEMT is formed on a GaAs substrate, and characteristics of this active device formed are measured. A circuit pattern of a passive circuit device including a serial microstrip line is simulated on the basis of the results of this measurement, and a circuit pattern obtained by the simulation is directly drawn on a substrate to form the passive circuit device, thereby to fabricate an MMIC. Accordingly, the passive circuit device is formed in conformity with the characteristics of the active device for each chip.
As a result, the variation in characteristics of the active device is canceled, to obtain an MMIC superior in matching.

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patent: 4950910 (1990-08-01), Yasuda et al.
Ka-Band Monolithic GaA5 Power Fet Amplifiers, IEEE MTT-S Digest (Hung).
A Uni-Planar MMIC 26-GHz-Band Receiver, Tetsuo Hirota et al., GsAs IC Symposium 185 (Hirota).
A Monolithic 3 to 40 GHz HEMT Distributed Amplifier, C. Yuen et al., GsAs IC Symposium 105.
Monolithic Integrated Circuit Applications of InGaAs/InAlAs HEMT's, M. Tutt et al., GaAs IC Symposium 293.
State of the Art of MMIC Technology and Design in West Germany, E. Pettenpaul, 1987, IEEE MTT-S Digest.

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