Method of fabricating micro-vertical structure

Details Method of fabricating micro-vertical structure Method of fabricating micro-vertical structure

2009-04-02

2010-06-29

Menz, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S456000, C438S700000

Reexamination Certificate

active

07745308

ABSTRACT:
A method of fabricating a micro-vertical structure is provided. The method includes bonding a second crystalline silicon (Si) substrate onto a first crystalline Si substrate by interposing an insulating layer pattern and a cavity, etching the second crystalline Si substrate using a deep reactive ion etch (DRIE) process along a [111] crystal plane vertical to the second crystalline Si substrate, and etching an etched vertical surface of the second crystalline Si substrate using a crystalline wet etching process to improve the surface roughness and flatness of the etched vertical surface. As a result, no morphological defects occur on the etched vertical surface. Also, footings do not occur at an etch end-point due to the insulating layer pattern. In addition, the micro-vertical structure does not float in the air but is fixed to the first crystalline Si substrate, thereby facilitating subsequent processes.

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