Method of fabricating metal-semiconductor interfaces

Details Method of fabricating metal-semiconductor interfaces Method of fabricating metal-semiconductor interfaces

1976-05-14

1977-11-01

Kendall, Ralph S.

Coating processes

Electrical product produced

Condenser or capacitor

204192S, 156643, 357 15, 357 67, 427 37, 427 39, 427 88, 427124, 427125, 427383R, 427383D, H01L 21302

Patent

active

040566420

ABSTRACT:
An improved method of fabricating metal-semiconductor interfaces such as Schottky barriers and ohmic contacts. There is disclosed apparatus and method (or process) for chemically converting, etching, or passivating the surface of a material, such as the surface of a silicon wafer, in a gaseous plasma environment consisting of atomic, neutral nitrogen which causes the surface of the material to be resistant to otherwise subsequent nascent surface oxide buildup. This process is particularly useful in manufacture of Schottky diodes, transistors, and other electronic components or discrete and integrated devices requiring high quality metal-semiconductor junctions or interfaces.

REFERENCES:
patent: 3795557 (1974-03-01), Jacob
patent: 3879597 (1975-04-01), Bensin
patent: 3956527 (1976-05-01), Magoo
patent: 3983264 (1976-09-01), Schroen

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