Method of fabricating mesa MOSFET using overhang mask and result

Details Method of fabricating mesa MOSFET using overhang mask and result Method of fabricating mesa MOSFET using overhang mask and result

1983-12-07

1986-12-02

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29579, 29580, 148187, 357 55, 357 234, H01L 2122

Patent

active

046253882

ABSTRACT:
A mesa structure field effect transistor includes a semiconductor body with at least one mesa formed on a major surface and an insulating layer on the mesa and overhanging the mesa. Doped regions in the side walls of the mesa define the channel region and source of the transistor, and the semiconductor body defines and drain region. Preferential etching techniques are employed in forming the mesas and the overhanging insulator. The overhanging insulator is employed as a shadow mask in fabricating the transistor.

REFERENCES:
patent: 3761785 (1973-09-01), Prunioux
patent: 3823352 (1974-07-01), Runiaux
patent: 3851379 (1974-12-01), Gutknecht et al.
patent: 4200968 (1980-06-01), Schroeder
patent: 4419811 (1983-12-01), Rice
patent: 4505022 (1985-03-01), Briere

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