Method of fabricating mesa MOSFET using overhang mask

Details Method of fabricating mesa MOSFET using overhang mask Method of fabricating mesa MOSFET using overhang mask

1982-04-26

1983-12-13

Ozaki, George T.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29579, 29580, 29591, 148187, H01L 2122

Patent

active

044198116

ABSTRACT:
A mesa structure field effect transistor includes a semiconductor body with at least one mesa formed on a major surface and an insulating layer on the mesa and overhanging the mesa. Doped regions in the side walls of the mesa define the channel region and source of the transistor, and the semiconductor body defines the drain region. Preferential etching techniques are employed in forming the mesas and the overhanging insulator. The overhanging insulator is employed as a shadow mask in fabricating the transistor.

REFERENCES:
patent: 3823352 (1974-07-01), Pruniaux et al.
patent: 3851379 (1974-12-01), Gutknecht et al.
patent: 3938241 (1976-02-01), George et al.
patent: 4200968 (1980-05-01), Schroeder
patent: 4374455 (1983-02-01), Goodman
patent: 4375124 (1983-03-01), Cogan

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