Method of fabricating mesa bipolar memory cell utilizing epitaxi

Details Method of fabricating mesa bipolar memory cell utilizing epitaxi Method of fabricating mesa bipolar memory cell utilizing epitaxi

1980-03-12

1981-10-06

Rutledge, L. Dewayne

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29580, 29590, 29591, 148174, 148175, 156647, 156649, 156653, 156657, 357 49, 357 51, 357 59, 357 68, 365154, H01L 21283, H01L 21302

Patent

active

042927307

ABSTRACT:
A memory cell having two mesa bipolar transistors separated by a valley in which two doped polycrystalline load resistors are formed. Doped polycrystalline conductors connect the resistors to a respective backside metallic collector contact which is between a support structure and a transistor and to a respective base.
The cell is fabricated by removing a substrate upon which was formed an epitaxial layer and top support, applying a backside metallic layer, forming a bottom support, removing the top support, etching the epitaxial layer to form mesas, etching the backside metal to form discrete contacts, and forming multi-level resistors and conductors in the valley between the mesa transistors separated by insulative material.

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patent: 4017341 (1977-04-01), Suzuki et al.
patent: 4035830 (1977-07-01), Kim
patent: 4131909 (1978-12-01), Matsuda et al.
patent: 4131985 (1979-01-01), Greenwood et al.
patent: 4146905 (1979-03-01), Appels et al.
patent: 4189342 (1980-02-01), Kock

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