Method of fabricating memory cells with buried bit lines

Details Method of fabricating memory cells with buried bit lines Method of fabricating memory cells with buried bit lines

1996-02-12

1996-12-17

Tsai, Jey

Fishing, trapping, and vermin destroying

437 52, 437 45, H01L 21265

Patent

active

055852963

ABSTRACT:
A method of fabricating memory cells with buried bit lines. In this method, a pad oxide layer is formed on a first conductivity-type silicon substrate. A photoresist layer is formed on the pad oxide layer while exposing predetermined areas of channels. A thick oxide layer is deposited by liquid phase deposition (LPD). The photoresist layer is removed. Second conductivity-type impurities are implanted to form source-drain electrodes using the thick oxide layer as a mask. The thick oxide layer and the pad oxide layer are removed to form bit lines and then word lines are formed crossing the bit lines, whereby the structure with buried bit lines and an array of memory cells is completed.

REFERENCES:
patent: 5436185 (1995-07-01), Hsue et al.
patent: 5504030 (1996-04-01), Chung et al.
patent: 5525535 (1996-06-01), Hong
patent: 5536669 (1996-07-01), Su et al.

Affiliated with

Also associated with

Rating

Method of fabricating memory cells with buried bit lines does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating memory cells with buried bit lines, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating memory cells with buried bit lines will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1990809