Method of fabricating memory and memory

Details Method of fabricating memory and memory Method of fabricating memory and memory

2007-11-20

2007-11-20

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S736000, C257SE21037

Reexamination Certificate

active

11260243

ABSTRACT:
A method of fabricating a memory capable of improving the strength of a signal read from a memory cell is provided. This method of fabricating a memory comprises steps of forming a storage part and an etched thin-film part by partially etching a storage material film formed on a first electrode film by a prescribed thickness, forming an insulator film to cover at least the thin-film part of the storage material film and patterning the insulator film and the thin-film part of the storage material film by forming an etching mask on a prescribed region of the insulator film and thereafter etching the insulator film and the thin-film part of the storage material film through the etching mask.

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