Method of fabricating low noise reference diodes and transistors

Details Method of fabricating low noise reference diodes and transistors Method of fabricating low noise reference diodes and transistors

1983-07-29

1986-05-27

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29591, 148 15, 357 34, 357 55, H01L 2104, H01L 2940

Patent

active

045906645

ABSTRACT:
The thick oxide over the surface portion of a P/N junction of a reference diode is removed, a thin oxide is grown thereon, and a contaminated shield layer is formed on the thin oxide. In addition to improving the reversed biased diode, the same method improves the forward biased emitter-base surface junction of a vertical bipolar transistor. The shield layer may be biased separate from the transistor.

REFERENCES:
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patent: 3717516 (1973-02-01), Hatcher, Jr. et al.
patent: 3719535 (1973-03-01), Zoroglu
patent: 3814997 (1974-06-01), Takahashi et al.
patent: 3845495 (1974-10-01), Cauge et al.
patent: 3909119 (1975-09-01), Wolley
patent: 4009481 (1977-02-01), Reindl
patent: 4050965 (1977-09-01), Ipri et al.
patent: 4089022 (1978-05-01), Asai et al.
patent: 4454524 (1984-06-01), Spence

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