Method of fabricating light emitting diodes

Details Method of fabricating light emitting diodes Method of fabricating light emitting diodes

1999-02-02

2000-12-26

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

H01L 2100

Patent

active

06165809&

ABSTRACT:
According to a light emitting diode fabricating method, when a top surface of an n-type GaAs substrate is inclined at an angle .theta. with respect to a (1 0 0) plane, a front electrode is formed on a surface shaped portion of a current diffusing layer of a thickness of `d`, the surface shaped portion reflecting a shape of a current blocking portion, in a displaced manner by an amount of approximately d/tan .theta. from in a direction opposite to a direction in which the surface shaped portion has been displaced with respect to the current blocking portion. Thus, the front electrode is formed in a correct position over the current blocking portion.

REFERENCES:
patent: 3900863 (1975-08-01), Kim
patent: 5506423 (1996-04-01), Saeki
patent: 5565694 (1996-10-01), Huang et al.

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