Method of fabricating light emitting diode

Details Method of fabricating light emitting diode Method of fabricating light emitting diode

2007-05-18

2009-08-11

Blum, David S (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S701000, C257S095000, C257SE51014

Reexamination Certificate

active

07572653

ABSTRACT:
Disclosed herein is a method of fabricating a light emitting diode. The method comprises preparing a substrate, forming a lower semiconductor layer, an active layer and an upper semiconductor layer on the substrate, forming a photoresist pattern over the upper semiconductor layer such that a sidewall of the photoresist pattern is inclined to an upper surface of the substrate, and sequentially etching the upper semiconductor layer, active layer and lower semiconductor layer using the photoresist pattern as an etching mask. With this structure, since the light emitting diode permits light generated in the active layer to be easily emitted to an outside through the sidewalls of the semiconductor layers, it has improved light emitting efficiency.

REFERENCES:
patent: 6498087 (2002-12-01), French et al.
patent: 6808957 (2004-10-01), Ho et al.
patent: 6838741 (2005-01-01), Sandvik et al.
patent: 2006/0169997 (2006-08-01), Suzuki et al.

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