Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2011-01-11
2011-01-11
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S046000, C257SE33023, C257SE33049
Reexamination Certificate
active
07867803
ABSTRACT:
A Metal Organic Vapor Phase Epitaxy step of growing a light emitting layer section24,composed of a first Group III-V compound semiconductor, epitaxially on a single crystal growth substrate1by Metal Organic Vapor Phase Epitaxy, and a Hydride Vapor Phase Epitaxial Growth step of growing a current spreading layer7on the light emitting layer section24epitaxially by Hydride Vapor Phase Epitaxial Growth Method, are conducted in this order. Then, the current spreading layer7is grown, having a low-rate growth layer7apositioned close to the light emitting layer side and then a high-rate growth layer7b,having a growth rate of the low-rate growth layer7alower than that of the high-rate growth layer7b,so as to provide a method of fabricating a light emitting device capable of preventing hillock occurrence while forming the thick current spreading layer.
REFERENCES:
patent: 5008718 (1991-04-01), Fletcher et al.
patent: 6218280 (2001-04-01), Kryliouk et al.
patent: 6777257 (2004-08-01), Shinohara et al.
patent: 6824610 (2004-11-01), Shibata et al.
patent: 6870190 (2005-03-01), Okuyama et al.
patent: 7145180 (2006-12-01), Shinohara et al.
patent: 2004/0023426 (2004-02-01), Shinohara et al.
patent: 2006/0046325 (2006-03-01), Usui et al.
patent: 2006/0118513 (2006-06-01), Faure et al.
patent: 2007/0072320 (2007-03-01), Frayssinet et al.
patent: 2007/0145405 (2007-06-01), Yamada et al.
patent: 2004-047960 (2004-02-01), None
patent: 2004-047973 (2004-02-01), None
patent: 2004-047974 (2004-02-01), None
patent: 2004-128452 (2004-04-01), None
patent: 2004-179613 (2004-06-01), None
patent: 2005-150772 (2005-06-01), None
Kume Fumitaka
Shinohara Masayuki
Arent & Fox LLP
Ghyka Alexander G
Shin-Etsu Handotai & Co., Ltd.
LandOfFree
Method of fabricating light emitting device and compound... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating light emitting device and compound..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating light emitting device and compound... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2740468