Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2005-04-13
2010-02-16
Fahmy, Wael (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S097000, C257SE33074, C438S022000, C438S023000, C438S046000, C438S047000
Reexamination Certificate
active
07663151
ABSTRACT:
A light emitting device chip is obtained by dicing a light emitting device wafer having a light emitting layer section24based on a double heterostructure in which a first-conductivity-type cladding layer6, an active layer5and an second-conductivity-type cladding layer4, each of which being composed of a compound semiconductor having a composition allowing lattice matching with GaAs, out of compound semiconductors expressed by formula (AlxGa1-x)yIn1-yP (where, 0≦x≦1, 0≦y≦1), are stacked in this order, and having the (100) surface appeared on the main surface thereof, and GaP transparent semiconductor layers20, 90stacked on the light emitting layer section24as being agreed with the crystal orientation thereof, so that the {100} surfaces appear on the side faces of the GaP transparent semiconductor layer. Accordingly, there can be provided a method of fabricating a light emitting device having the AlGaInP light emitting layer section and the GaP transparent semiconductor layers, less causative of failures such as edge chipping during the dicing.
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English translation of Abstract of Ibuka.
Ikeda Hitoshi
Nakamura Akio
Suzuki Kingo
Fahmy Wael
Oliff & Berridg,e PLC
Sayadian Hrayr A
Shin-Etsu Handotai & Co., Ltd.
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