Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2005-04-13
2009-08-25
Garber, Charles D. (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S964000, C438S033000, C438S022000, C438S047000, C257SE33003
Reexamination Certificate
active
07579205
ABSTRACT:
A light emitting device wafer having a light emitting layer section24having an AlGaInP-base double heterostructure, and a GaP light extraction layer20disposed on the light emitting layer section so as to allow a first main surface thereof to compose a first main surface of the wafer is fabricated so that the first main surface of the GaP light extraction layer appears as the (100) surface. The first main surface of the GaP light extraction layer20composed of the (100) surface is etched using an etching solution for surface roughening to thereby form surface roughening projections40f. Accordingly, there can be provided a method of fabricating a light emitting device having the GaP light extraction layer agreed with the (100) main surface, capable of readily subjecting the (100) main surface to surface roughening.
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Ikeda Hitoshi
Nakamura Akio
Suzuki Kingo
Garber Charles D.
Oliff & Berridg,e PLC
Sene Pape
Shin-Etsu Handotai & Co., Ltd.
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