Method of fabricating light emitting device

Details Method of fabricating light emitting device Method of fabricating light emitting device

2006-05-29

2010-06-29

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S023000, C438S024000, C438S029000, C438S032000, C438S033000, C438S042000, C438S043000, C438S046000

Reexamination Certificate

active

07745246

ABSTRACT:
A light emitting device wafer is fabricated, having a light emitting layer section, composed of AlGaInP, based on a double heterostructure and a GaP light extraction layer disposed on the light emitting layer portion, having a first main surface thereof appearing on the first main surface of the wafer, so as that a P-rich off-angled {100} surface, having a higher existence rate of P atoms than an exact {100} surface, appears on the first main surface the GaP light extraction layer. The main first surface of the GaP light extraction layer is etched with an etching solution FEA so as to form surface roughening projections. Therefore, it provides a method of fabricating a light emitting device capable of applying surface roughening easily to the GaP light extraction surface having the {100} surface, off-angled to be P-rich, as a main surface thereof.

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