Method of fabricating lateral PNP transistors utilizing selectiv

Details Method of fabricating lateral PNP transistors utilizing selectiv Method of fabricating lateral PNP transistors utilizing selectiv

1979-09-19

1981-08-11

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29578, 148 15, 148175, 357 35, 357 44, 357 89, 357 92, H01L 2122, H01L 2131

Patent

active

042832365

ABSTRACT:
A lateral PNP transistor is formed by diffusing N type inpurities into an N type layer to form base contact region and base region, diffusing P type impurities into the N base region and N layer to form emitter and collector regions respectively, and counter doping the layer area between the N base region and the collector region. The counter doping is performed through a non-critical mask aperture extending between the emitter and collector regions.

REFERENCES:
patent: 3766446 (1973-10-01), Tarui et al.
patent: 3873989 (1975-03-01), Schinella et al.
patent: 4053923 (1977-10-01), Kang
patent: 4072981 (1978-02-01), Black et al.
patent: 4126496 (1978-11-01), Verderber
patent: 4155777 (1979-05-01), Dunkley et al.
patent: 4160988 (1979-07-01), Russell
patent: 4180827 (1979-12-01), Gates
patent: 4196228 (1980-04-01), Priel et al.

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