Method of fabricating laser diode

Details Method of fabricating laser diode Method of fabricating laser diode

1997-06-25

1998-06-23

Niebling, John

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

438 40, 438 41, 148DIG50, 148DIG95, H01L 2100

Patent

active

057704740

ABSTRACT:
A method of fabricating a laser diode with reverse mesa structure has the following processes. A buffer layer of a first conductivity type, an active layer, a clad layer of a second conductivity type and a high-concentration contact layer of the second conductivity type are sequentially formed on a compound semiconductor substrate of the first conductivity type. Predetermined portions of the contact layer and of the clad layer are etched to form a reverse mesa structure. A passivation layer is formed on the overall substrate and the passivation existing on the reverse mesa structure is removed to expose the contact layer. A metal layer is formed on the exposed contact layer to contact therewith and a conductive metal layer is uniformly formed on the metal layer and the passivation layer. A pad metal layer is formed on the conductive metal layer to fill the etched portions of either side of the reverse mesa structure.

REFERENCES:
patent: 4994143 (1991-02-01), Kim
patent: 5021361 (1991-06-01), Kimoshita et al.
patent: 5541950 (1996-07-01), Kizuki et al.

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