Method of fabricating ion implanted znse p-n junction devices

Details Method of fabricating ion implanted znse p-n junction devices Method of fabricating ion implanted znse p-n junction devices

1974-07-26

1976-03-02

Lake, Roy

Metal working

Method of mechanical manufacture

Electrical device making

148 15, 357 91, B01J 1700

Patent

active

039408477

ABSTRACT:
Light emitting diodes, switching diodes with memory, and backward diodes are fabricated by phosphorus ion implantation of a p-n semiconductor junction in aluminum doped zinc selenide substrate material.

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patent: 3549434 (1970-12-01), Aven
patent: 3638300 (1972-02-01), Foxhall
patent: 3705059 (1972-12-01), Kun
patent: 3732471 (1973-05-01), Hou et al.

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