Method of fabricating interconnection structure of...

Details Method of fabricating interconnection structure of... Method of fabricating interconnection structure of...

2006-09-26

2006-09-26

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S740000, C257SE21008, C257S577000, C257S579000

Reexamination Certificate

active

07112537

ABSTRACT:
A method of fabricating an interconnection structure of a semiconductor device includes the steps of successively depositing an etch-stop layer and an intermetal insulating layer on a semiconductor substrate, forming a sacrificial insulating layer on the intermetal insulating layer, forming a photoresist pattern on the sacrificial insulating layer to define a trench formation region, etching the intermetal insulating layer using a mask of the photoresist pattern to form a trench, and etching the entire etch-stop layer.

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patent: 6573572 (2003-06-01), Farrar
patent: 6649522 (2003-11-01), Farrar
patent: 2001-168188 (2001-06-01), None

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