Method of fabricating interconnect structure

Details Method of fabricating interconnect structure Method of fabricating interconnect structure

2006-12-01

2008-10-21

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S393000, C438S624000, C438S761000, C257SE21260, C257SE21271

Reexamination Certificate

active

07439154

ABSTRACT:
A method for fabricating an interconnect structure is described. A substrate with a conductive part thereon is provided, a first porous low-k layer is formed on the substrate, and then a first UV-curing step is conducted. A damascene structure is formed in the first porous low-k layer to electrically connect with the conductive part, and then a first UV-absorption layer is formed on the first porous low-k layer and the damascene structure. A second porous low-k layer is formed on the first UV-absorption layer, and a second UV-curing step is conducted.

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