Method of fabricating integrated silicon and non-silicon semicon

Details Method of fabricating integrated silicon and non-silicon semicon Method of fabricating integrated silicon and non-silicon semicon

1990-08-31

1991-11-12

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437234, H01L 2118

Patent

active

050647814

ABSTRACT:
Silicon and non-silicon semiconductor devices are fabricated on a single chip by bonding a silicon wafer to a non-silicon semiconductor substate. Portions of the non-silicon semiconductor substrate are selectively etched to expose the silicon wafer. Semiconductor devices may then be formed in the silicon wafer and on the non-silicon semiconductor substrate. Alternatively, selective epitaxial silicon may be grown where the non-silicon semiconductor substrate was removed. In another embodiment, a non-silicon semiconductor substrate having wells formed therein is bonded to a silicon wafer. The non-silicon semiconductor substrate is then polished until openings are provided to the silicon wafer. Further processing is carried out as described above.

REFERENCES:
patent: 4261781 (1981-04-01), Edmonds et al.
patent: 4774205 (1988-09-01), Choi et al.
patent: 4826784 (1989-05-01), Salerno
patent: 4925810 (1990-05-01), Kano

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