Method of fabricating integrated devices

Details Method of fabricating integrated devices Method of fabricating integrated devices

1993-09-30

1995-11-07

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 44, 437 52, 257316, 257326, H01L 218247, H01L 21266

Patent

active

054647843

ABSTRACT:
A method comprising the steps of depositing a first and second polysilicon layer, separated by an oxide layer; selectively etching the second polysilicon layer to form first gate regions; forming first substrate regions in the substrate and laterally in relation to the first gate regions; selectively etching the first polysilicon layer to form second gate regions of a length greater than the first gate regions; and forming in the substrate, laterally in relation to the second gate regions and partially overlapping the first substrate regions, second substrate regions of a higher doping level than the first substrate regions.

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