Method of fabricating integrated circuits with oxidized isolatio

Details Method of fabricating integrated circuits with oxidized isolatio Method of fabricating integrated circuits with oxidized isolatio

1989-08-18

2000-07-25

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Isolation by pn junction only

438414, 438444, 438356, 438357, 438359, H01L 2176

Patent

active

060936207

ABSTRACT:
A thin silicon epitaxial layer, formed on a silicon substrate, is subdivided into electrically isolated pockets by a grid of oxidized regions of epitaxial silicon material which extend through the epitaxial layer to a laterally extending PN junction.

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