Fishing – trapping – and vermin destroying
Patent
1995-05-25
1996-08-13
Dang, Trung
Fishing, trapping, and vermin destroying
437 41, 437228, 437 50, 437 29, 437913, 5566511, H01L 21265
Patent
active
055455735
ABSTRACT:
In order to prevent an etch-down phenomenon in a gate electrode (106), a source electrode (108) is connected to an upper major surface of a semiconductor substrate (160) through openings (112, 112a) of a protective film (107), while a gate wire (109) is connected to the gate electrode (106) through an opening (111). The opening (112, 112a) are formed by dry etching, whereby the source electrode (108) is reliably insulated from the gate electrode (106). On the other hand, the opening (111) is formed by wet etching, whereby the gate electrode (106) is not etched down. Thus, it is possible to prevent short-circuiting defectiveness across the gate electrode (106) and the semiconductor substrate (160) resulting from an etch-down phenomenon of the gate electrode (106) while guaranteeing electrical insulation between the gate electrode (106) and the source electrode (108).
REFERENCES:
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patent: 5034336 (1991-07-01), Seki
patent: 5164327 (1992-11-01), Maruyama
patent: 5250449 (1993-10-01), Kuroyanagi et al.
patent: 5374571 (1994-12-01), Mukherjee et al.
patent: 5404040 (1995-04-01), Hshieh et al.
Hisamoto Yoshiaki
Narazaki Atsushi
Dang Trung
Mitsubishi Denki & Kabushiki Kaisha
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