Method of fabricating improved short channel MOS devices utilizi

Details Method of fabricating improved short channel MOS devices utilizi Method of fabricating improved short channel MOS devices utilizi

1978-12-04

1980-05-06

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29571, 29578, 29580, 148 15, 148175, 148187, 148190, 156628, 156657, 357 4, 357 23, 357 49, 357 59, 357 91, 427 85, H01L 21225, H01L 21308

Patent

active

042016037

ABSTRACT:
A method for fabricating a short channel MOS device is described wherein the conductivity of the gate member is increased by a factor of about 2.5 by counterdoping a P-type doped polycrystalline line with an N-type dopant.

REFERENCES:
patent: 3600651 (1971-08-01), Duncan
patent: 3738880 (1973-06-01), Laker
patent: 3980507 (1976-09-01), Carley
patent: 4026733 (1977-05-01), Owen et al.
patent: 4026740 (1977-05-01), Owen
patent: 4057824 (1977-11-01), Woods
patent: 4057895 (1977-11-01), Ghezzo
patent: 4093503 (1978-06-01), Harris et al.
patent: 4124933 (1978-11-01), Nicholas

Affiliated with

Also associated with

Rating

Method of fabricating improved short channel MOS devices utilizi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating improved short channel MOS devices utilizi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating improved short channel MOS devices utilizi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1003578