Method of fabricating improved radiation hardened self-aligned C

Details Method of fabricating improved radiation hardened self-aligned C Method of fabricating improved radiation hardened self-aligned C

1978-04-06

1982-02-02

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 357 23, 357 59, 357 91, H01L 21225, H01L 700

Patent

active

043137687

ABSTRACT:
A radiation hardened CMOS formed by applying a radiation hard gate oxide layer on a silicon substrate, by applying silicon doped aluminum gates on the gate oxide, and by ion implanting and annealing source and drain regions using said gates as masks at a temperature of or below 500 degrees centigrade. Using an N.sup.- type substrate, a P.sup.+ guard ring is formed at the interface of the P.sup.- well of the N channel MOS device and the N.sup.- substrate before the formation of the gate oxide.

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patent: 4135955 (1979-01-01), Gasner et al.
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