Method of fabricating implanted wells and islands of CMOS circui

Details Method of fabricating implanted wells and islands of CMOS circui Method of fabricating implanted wells and islands of CMOS circui

1988-08-12

1991-12-10

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 30, 437 34, 437 57, H01L 21265

Patent

active

050717774

ABSTRACT:
A method is disclosed for forming implanted wells and islands of CMOS integrated circuits with a retrograde profile, i.e., with wells and islands having a smaller penetration depth, shallower doping profile, and less lateral diffusion than in conventional CMOS circuits.

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IEEE Electron Device Letters, EDL-7 (1986), pp. 124-126, H-H. Tsai et al., "A New Fully Recessed-Oxide (FUROX) Field Isolation Technology for Scaled VLSI Circuit Fabrication".
Journal of the Electrochemical Society, Book 134, No. 6, Jun. 1987, pp. 1503-1507, Manchester, NH, US: K. Sakuma et al., "A New Self-Aligned Planar Oxidation Technology".
IEEE Transactions on Electron Devices, Book 35, No. 3, Mar. 1988, pp. 275-284, IEEE, New York, US; H-H Tsai et al., "An Evaluation of FUROX Isolation Technology for VLSI
MOSFET Fabrication".
1046B Extended Abstracts; 87-1 (1987) Spring, No. 1, Philadelphia, PA, USA, Abstract No. 154 P 213-214.
A Retrograde p-Well for Higher Density CMOS; IEEE Transactions on Electron Devices, vol. Ed-28, No. 10, Oct. 1981; by Robert D. Rung, Conrad J. Dell'oca and Laurence G. Walker; pp. 1115-1119.
Proceedings of the IEEE 1985 Custom Integrated Circuits Conference, The Portland Hilton, Portland, Oregon, USA, May 20-23, 1985; pp. 199-202; Optimized Retrograde N-Well for One Micron CMOS Technology; By Russel A. Martin & John Y. Chen.

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