Fishing – trapping – and vermin destroying
Patent
1991-12-17
1992-11-10
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
148DIG87, 257554, 257556, H01L 2170, H01L 2700
Patent
active
051622521
ABSTRACT:
The present invention provides a semiconductor device, in particular, a semiconductor device comprising a vertical npn transistor, a vertical pnp transistor and an IIL which are integrated on the same one-conductivity type semiconductor substrate (1). The IIL comprises an emitter, a base and a collector which are respectively comprised of a high-density n.sup.+ -type first buried layer (5), a p.sup.+ -type second buried layer (8) having a lower impurity density than the n.sup.+ -type first buried layer (5), and at least one of n.sup.+ -type diffused layer (31).
The semiconductor device thus constituted makes it possible to increase the emitter injection efficiency while the base impurity density is kept high, and also to decrease the base width, so that the collector-emitter breakdown voltage and current gain of the IIL can be more improved and also the operation speed of the IIL can be made higher.
Hirai Takehiro
Kanda Akihiro
Nakatani Masahiro
Tanaka Mitsuo
Chaudhuri Olik
Matsushita Electric - Industrial Co., Ltd.
Pham Long
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