Method of fabricating high threshold metal oxide silicon read-on

Details Method of fabricating high threshold metal oxide silicon read-on Method of fabricating high threshold metal oxide silicon read-on

1994-01-07

1995-02-14

Thomas, Tom

Fishing, trapping, and vermin destroying

437 44, 437 48, H01L 2170

Patent

active

053895657

ABSTRACT:
A method of forming ROM transistor memory cell including not forming lightly doped regions in the semiconductor substrate for some of the memory cells so as to form one type of memory cell and forming the lightly doped regions in another type of memory cell.

REFERENCES:
patent: 4406049 (1983-09-01), Tam et al.
patent: 5081052 (1992-01-01), Kobayashi et al.

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