Method of fabricating high power bipolar junction transistor

Details Method of fabricating high power bipolar junction transistor Method of fabricating high power bipolar junction transistor

1998-12-02

2000-10-31

Tsai, Jey

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Using epitaxial lateral overgrowth

438309, 438312, 438361, 438363, 438413, H01L 21331

Patent

active

06140196&

ABSTRACT:
A method of fabricating a high power bipolar junction transistor. A P-type substrate having an N-type buried region is provided and a trench is formed within the substrate to expose the buried region. N-type ions are implanted and driven into the sidewall of the trench to form a sinker. Since the area and the depth of implantation are larger and deeper than that in prior art, the concentration of the sinker is more uniform and the diffusion range is easily controlled. An N-type epitaxial layer is then formed in the trench and an emitter, a base and their contacts are formed by conventional technique.

REFERENCES:
patent: 5057443 (1991-10-01), Hutter

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