Method of fabricating high density refractory metal gate MOS int

Details Method of fabricating high density refractory metal gate MOS int Method of fabricating high density refractory metal gate MOS int

1979-09-26

1981-08-11

Rutledge, L. Dewayne

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 148 15, 148187, 156652, 156653, 156656, 156664, 357 23, 357 54, 427 93, H01L 21223, H01L 21283

Patent

active

042826470

ABSTRACT:
A method for fabricating an MOS integrated circuit having a refractory metal gate structure includes the formation of an insulating layer and a conductive refractory metal layer on a substrate, followed by the selective removal of portions of these layers to define the locations of source, drain, and other diffused regions. After the diffusion or implantation of the drain and source regions, using the refractory metal as a mask, the refractory metal, other than at the gate regions, is removed, and the portion of the underlying insulating layer that is thereby exposed is then etched away. An oxidizing step is performed to form a thick oxide region at those areas of the substrate not covered by the remaining portions of the refractory metal layer. Also disclosed is an MOS refractory metal gate MOS device fabricated by the method.

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patent: 3967981 (1976-07-01), Yamazaki
patent: 4149307 (1979-04-01), Henderson
patent: 4160987 (1979-07-01), Dennard et al.

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