Method of fabricating high density MOSFETs with field aligned ch

Details Method of fabricating high density MOSFETs with field aligned ch Method of fabricating high density MOSFETs with field aligned ch

1985-05-16

1987-07-14

Ozaki, George T.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29576W, 29578, 148187, 357 2311, 357 2312, H01L 21425

Patent

active

046793038

ABSTRACT:
A high-density MOSFET having field oxide self-aligned channel stops for device isolation and an optimal method of fabricating such a device is described. The process provides channel stops underlying and aligned with the edges of a field oxide layer and allows the dopant concentration of the channel stops to be established separately from that of the active device channel region by use of an independant channel stop implant. The active devices thus formed require minimal isolation area, have a high field threshold voltage, a low junction capacitance, and minimal body effect. They are particularly useful in high-speed, high-performance integrated circuits.

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IBM Tech Disclosure Bulletin vol. 14 #8 1/72 "Improved Thick-Thin Oxide Ratio" by Siegle.

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