Semiconductor device manufacturing: process – Making device array and selectively interconnecting
Patent
1997-04-25
2000-11-21
Bowers, Charles
Semiconductor device manufacturing: process
Making device array and selectively interconnecting
438DIG928, 438DIG967, 438DIG977, H01L 2177
Patent
active
061501972
ABSTRACT:
A process for fabricating heterolithic microwave integrated circuits. According to one exemplary embodiment, a glass substrate is fused to a silicon wafer, and the silicon wafer is etched to effect silicon pedestals. A glass layer is fused onto and about the silicon mesas and effectively polished to expose the tops of the silicon mesas. The backside glass layer is then polished to render a final thickness of the dielectric layer between the top surface and ground plane. In another exemplary embodiment, a layer of silicon may be selectively etched to form mesas that function as either pedestals or vias. A layer of glass may be fused to the silicon prior to etching. A layer of glass is fused to the silicon substrate and pedestals and planarized through standard polishing techniques. The wafer may be "flipped over" and polished in order to remove a substantial portion of the silicon or glass, depending on which is used. Thereafter, the integrated circuit is fabricated through standard techniques.
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Boles Timothy Edward
Goodrich Joel Lee
Bowers Charles
Pert Evan
The Whitaker Corp.
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