Method of fabricating HEMT device with selective etching of gall

Details Method of fabricating HEMT device with selective etching of gall Method of fabricating HEMT device with selective etching of gall

1991-01-22

1992-06-02

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437133, 437203, 156656, H01L 21265, H01L 2120

Patent

active

051186373

ABSTRACT:
A semiconductor device having a heterojunction and utilizing a two-dimensional electron gas formed at said the heterojunction comprises a substrate of a semi-insulating material, a first semiconductor layer of undoped indium gallium arsenide formed on the substrate, a second semiconductor layer of n-type indium aluminium arsenide formed on the first semiconductor layer and defining the heterojunction between the first semiconductor layer and the second semiconductor layer, the second semiconductor layer including an exposed region defining an exposed top surface, a third semiconductor layer of n-type gallium arsenide antimonide formed on the second semiconductor layer and having a window defined therein so as to expose the top surface of the exposed top surface region, a gate electrode formed in self-alignment with the window and in contact with the exposed top surface region of the second semiconductor layer, and ohmic electrodes formed on the cap layer in ohmic contact therewith.

REFERENCES:
patent: 4635343 (1987-01-01), Kuroda
patent: 4733283 (1988-03-01), Kuroda
patent: 4821082 (1989-04-01), Frank et al.
patent: 4833101 (1989-05-01), Fujii
Fathimulla et al., "High Performance InGaAs/InGaAs HEMT's and MESFET's", IEEE . . . Electron Devices, vol. 9, No. 7, 1988, 328-330.
Peng et al., "Microwave Performance of InAlAs/InGaAs/InP MODFET's", IEEE . . . , Electron Devices, vol. EDL-8, No. 1 1987, 24-26.
C. B. Cooper, III et al., "Use of thin AlGaGs and InGaAs stop-etch layers for reactive ion etch processing of III-V compound semiconductor devices," Applied Physics Letters, vol. 51, No. 26, Dec. 28 1987, pp. 2225-2226.

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