Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1989-02-21
1990-12-25
Roy, Upendra
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
156610, 156643, 20419224, 427 62, 437910, 505702, H01L 3922, H01L 3924
Patent
active
049803417
ABSTRACT:
A superconducting electronic device utilizes a weak link (Josephson junction) between two regions of superconductor material. A method of making such a device having a granular structure consists of taking a substrate with a predetermined grain size, and forming a thin film of superconducting ceramic upon it. The film adopts the grain size and structure of the substrate, and the film is then processed to form two relatively large areas of granular film connected by a thin link which contains a single grain boundary which acts as the weak link.
REFERENCES:
patent: 4316785 (1982-02-01), Suzuki et al.
Gao et al., Intl. Jour. Modern Physics B. V-1 (1987), 583.
Nakayama et al., Jap. Jour. Appl. Phys. 26 (Dec. 1987), L-2055.
Koch et al., Appl. Phys. Lett. 51 (1987), 200.
Rothschild et al., IEEE-Electron Device Letts. 9 (Feb. 1988), 68.
Liberts et al., Appl. Phys. A46 (Aug. 1988), 331.
Koch et al. in High Tc Superconductors, ed. Gubser et al., Apr. 87, Mrs, Pittsburgh.
Roy Upendra
The General Electric Company p.l.c.
LandOfFree
Method of fabricating grain boundary Josephson junction does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating grain boundary Josephson junction, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating grain boundary Josephson junction will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1162805