Method of fabricating GaN

Details Method of fabricating GaN Method of fabricating GaN

2006-10-11

2008-12-09

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Heterojunction formed between semiconductor materials which...

C257S201000, C257SE21108, C257SE21097, C257SE21117, C257SE21121, C257SE21215, C257SE21218

Reexamination Certificate

active

07462893

ABSTRACT:
A method of fabricating a thick gallium nitride (GaN) layer includes forming a porous GaN layer having a thickness of 10-1000 nm by etching a GaN substrate in a reaction chamber in an HCI and NH3gas atmosphere and forming an in-situ GaN growth layer in the reaction chamber. The method of forming the porous GaN layer and the thick GaN layer in-situ proceeds in a single chamber. The method is very simplified compared to the prior art. In this way, the entire process is performed in one chamber, and in particular, GaN etching and growth are performed using an HVPE process gas such that costs are greatly reduced.

REFERENCES:
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