Method of fabricating field-effect transistor utilizing improved

Details Method of fabricating field-effect transistor utilizing improved Method of fabricating field-effect transistor utilizing improved

1987-10-05

1988-11-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 29, 437 44, 437 41, 437228, 437241, 437238, 156653, 357 23, H01L 21265

Patent

active

047866098

ABSTRACT:
Gate sidewall spacers are created by a two-step procedure in fabricating a field-effect transistor using a protective material such as silicon nitride to prevent gate-electrode oxidation. In the first step, a layer (32) of insulating material is conformally deposited and then substantially removed except for small spacer portions (34) adjoining the sidewalls of a doped non-monocrystalline semiconductor layer (20A) destined to become the gate electrode (36). The second step consists of performing an oxidizing heat treatment to increase the thickness of the spacer portions. No significant gate dielectric encroachment occurs. Also, the spacers achieve a profile that substantially avoids electrical shorts.

REFERENCES:
patent: 4419809 (1983-12-01), Riseman et al.
patent: 4419810 (1983-12-01), Riseman
patent: 4420872 (1983-12-01), Soladezaldivar
patent: 4486943 (1984-12-01), Ryden et al.
patent: 4503601 (1985-05-01), Chiao
patent: 4701423 (1987-10-01), Szluk
patent: 4703551 (1987-11-01), Szluk et al.
patent: 4737472 (1988-04-01), Schaber et al.
Ogura et al, "Elimination of Hot Electron . . . ", IEDM Tech. Dig., 1981, pp. 651-654.
"Single Device DRAM . . . ", IBM TDB, May 1985, pp. 7270-7271.
Shibata et al, "An Optimally Designed . . . ", IEEE IEDM Tech. Dig., 1981, pp. 647-650.

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