Method of fabricating electroluminescent element utilizing multi

Details Method of fabricating electroluminescent element utilizing multi Method of fabricating electroluminescent element utilizing multi

1977-11-22

1980-08-19

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29580, 29583, 148 15, 357 16, 357 17, 357 30, 357 65, H01L 2120, H01L 21302

Patent

active

042182700

ABSTRACT:
An epitaxial layer of a photoelectric element, which is formed on a substrate and in which a p-n junction is formed has a high carrier density region adjacent the substrate, so that the provision of ohmic electrodes thereon is facilitated.

REFERENCES:
patent: 3089794 (1963-05-01), Marinace
patent: 3508126 (1970-04-01), Newman et al.
patent: 3634872 (1972-01-01), Umeda
patent: 3647581 (1972-03-01), Mash
patent: 3745423 (1973-07-01), Kasano
patent: 3873382 (1975-03-01), Groves et al.
patent: 4000020 (1976-12-01), Gartman
Herzog et al, "Electroluminescence . . . GaAsP Diodes . . . " J. Applied Physics, vol. 40, No. 4, Mar. 15, 1969, pp. 1830-1838.
Blakeslee et al, "Receiving Resistance in PN Junctions Using GaAsP" I.B.M. Tech. Disc. Bull, vol. 15, No. 4, Sep. 1972, p. 1284.

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