Method of fabricating electrically-programmable element in a sem

Details Method of fabricating electrically-programmable element in a sem Method of fabricating electrically-programmable element in a sem

1988-09-15

1989-07-04

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437048, 365100, 365103, H01L 21265

Patent

active

048450456

ABSTRACT:
An electrically programmable element is fabricated in a P-N junction isolated region of a semiconductor body by first extending the depth of the region in the body by introducing dopants through the region into the body by ion implantation or by diffusion and drive-in, and thereafter forming an amorphotized layer in the first region overlying the extended portion. The increased depth of the first region provided by the second region prevents damage to the P-N junction between the semiconductor body and the first region during formation of the amorphotized layer.

REFERENCES:
patent: 4569120 (1986-02-01), Stacy et al.
patent: 4590589 (1986-05-01), Gerzberg

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